Avalanche BreakdownMediumQuestion 20229
Question
Avalanche breakdown in a reverse-biased diode occurs due to:
- AQuantum tunneling of carriers across the junction
- BHigh-velocity carriers ionising more atoms by impact (impact ionisation), creating an avalanche of carriersCorrect
- CThermal runaway
- DZener effect only
Correct answer
High-velocity carriers ionising more atoms by impact (impact ionisation), creating an avalanche of carriers
Explanation
At high reverse voltage, thermally generated minority carriers gain enough energy to ionise silicon atoms → more electron-hole pairs → these also ionise → avalanche multiplication → current rises sharply. Zener breakdown (~≤5 V) is quantum tunneling; avalanche (>5 V) is impact ionisation.