Semiconductor ClassificationEasyQuestion 20264
Question
Germanium has band gap Eg = 0.67 eV. At room temperature, compared to silicon (Eg = 1.1 eV), germanium has:
- ALower intrinsic carrier density
- BHigher intrinsic carrier densityCorrect
- CSame intrinsic carrier density
- DZero intrinsic carrier density
Correct answer
Higher intrinsic carrier density
Explanation
nᵢ ∝ exp(−Eg/2kT). Smaller Eg → larger exponent → higher nᵢ. Ge has more intrinsic carriers than Si at the same temperature → higher conductivity → lower breakdown voltage → less suitable for high-temperature operation.